Indexed by: Journal paper

Journal: Journal of Luminescence

Affiliation of Author(s): 光电学院，国家光电研究中心

Place of Publication: 美国

Discipline: Engineering

Funded by: 自然科学基金

Document Type: J

Volume: 175

Page Number: 213-216

Key Words: 无

DOI number: 10.1016/j.jlumin.2016.03.001

Date of Publication: 2016-03-01

Teaching and Research Group: c716

Abstract: We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed. Increasing the distance between the nanoparticles and quantum-wells has shown to enhance the emission. We have found that the nano-structure geometry of the metal-semiconductor interface in the near-field of the quantum-wells plays a crucial role in determining whether the emitter performance is enhanced or degraded.

Note: 无

Links to published journals: https://doi.org/10.1016/j.jlumin.2016.03.001