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论文类型：期刊论文

发表刊物：Journal of Luminescence

所属单位：光电学院，国家光电研究中心

刊物所在地：美国

学科门类：工学

项目来源：自然科学基金

文献类型：J

卷号：175

页面范围：213-216

关键字：无

DOI码：10.1016/j.jlumin.2016.03.001

发表时间：2016-03-01

教研室：c716

摘要：We have investigated the borderline between photoluminescence quenching and enhancement of InGaN/GaN quantum-wells due to Ag nanoparticles and their surface plasmon modes. By embedding Ag nanoparticles inside nanohole structures on the p-type layer GaN, luminescence quenching is observed. Increasing the distance between the nanoparticles and quantum-wells has shown to enhance the emission. We have found that the nano-structure geometry of the metal-semiconductor interface in the near-field of the quantum-wells plays a crucial role in determining whether the emitter performance is enhanced or degraded.

备注：无

发布期刊链接：https://doi.org/10.1016/j.jlumin.2016.03.001