A Superlattice Interfacial Phase Change Material with Low Power Consumption

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Indexed by:Journal paper

Journal:J. Electron. Mater.

Included Journals:SCI

Discipline:Engineering

First-Level Discipline:Electronic Science And Technology

Document Type:J

Key Words:iPCM; Bi; Te; /GeTe; lower power consumption; Ge atom flip

DOI number:10.1007/S11664-022-09888-X

Abstract:In order to further reduce the energy required for SET/RESET operations of interfacial phase change memory, Bi2Te3/GeTe, a novel chalcogenide superlattice interfacial phase change material (iPCM), was proposed by introducing greater stress at the superlattice interface. Based on the Ge-atom flip-flop model, ab initio simulation was employed to design and optimize the Ge atom movement path at the interface. Compared with the conventional Sb2Te3/GeTe iPCM, Bi2Te3/GeTe iPCM needs to overcome a lower energy barrier to complete the phase change process, presenting a lower SET/RESET power consumption advantage for interfacial phase change memory applications.