Indexed by: Journal paper

Journal: J. Electron. Mater.

Included Journals: SCI

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Key Words: iPCM; Bi; Te; /GeTe; lower power consumption; Ge atom flip

DOI number: 10.1007/S11664-022-09888-X

Abstract: In order to further reduce the energy required for SET/RESET operations of interfacial phase change memory, Bi2Te3/GeTe, a novel chalcogenide superlattice interfacial phase change material (iPCM), was proposed by introducing greater stress at the superlattice interface. Based on the Ge-atom flip-flop model, ab initio simulation was employed to design and optimize the Ge atom movement path at the interface. Compared with the conventional Sb2Te3/GeTe iPCM, Bi2Te3/GeTe iPCM needs to overcome a lower energy barrier to complete the phase change process, presenting a lower SET/RESET power consumption advantage for interfacial phase change memory applications.