梁琳，博士，华中科技大学电气与电子工程学院研究员、博士生导师，集成电路学院双聘导师，电力安全与高效利用教育部工程研究中心副主任。2003年和2008年分别获得华中科技大学电子科学与技术专业学士和博士学位，2008年至2010年华中科技大学电气工程站任博士后，曾受国家留学基金委资助赴美国北卡罗莱纳州立大学FREEDM Systems Center任访问教授。IEEE高级会员、IEEE IES学会武汉分会主席、中国电工技术学会高级会员、中国电工技术学会电力电子专委会常务委员、中国电源学会元器件专业委员会副主任委员、中国电机工程学会电力电子器件专业委员会委员、《IEEE Journal of Emerging and Selected Topics in Power Electronics》期刊副编辑、《Power Electronic Devices and Components》期刊副编辑、《电力电子技术》期刊编委、《IEEE Transactions on Dielectrics and Electrical Insulation》专辑特邀副编辑、“电力电子新技术系列图书”编辑委员会委员、中国电源学会功率元器件及模块产业与技术发展路线图编写组副组长。获评中国电源领域“最美科技工作者”；获评中达青年学者奖；获评湖北省优秀博士学位论文；多次获评《中国电机工程学报》、《电工技术学报》年度优秀审稿专家；获评华中科技大学主讲教师。研究方向为功率半导体器件、封装、可靠性及其应用。先后主持承担国家自然科学基金（连续3项）、湖北省自然科学基金、台达电力电子科教发展计划青年以及重点项目、中国工程物理研究院脉冲功率科学与技术重点实验室基金以及高功率微波技术重点实验室基金、基础科研计划、装备预研基金以及企业、科研院所委托的项目若干，国家重点研发计划课题负责人。发表学术论文近百篇；合作出版专著2部；获授权国家发明专利20余项，转让3项。 

代表性著作：

[1] 梁琳, 余岳辉. 脉冲功率器件及其应用（第2版）. 北京: 机械工业出版社, 2024.

[2] Zhengheng Qing, Lin Liang, Tong Liu. Transient turn-on characteristics of Si RBDT and SiC MOSFET under nanosecond current pulse range, Solid-State Electronics, 2024, 127: 108953.

[3] Xiaoxue Yan, Lin Liang, Zewei Yang, et al. Investigation of prepulse of SiC drift step recovery diode in fast interruption process, IEEE Transactions on Electron Devices, 2024, 71(5): 3102-3108.

[4] Zhengheng Qing, Lin Liang, Xiaoxue Yan. A novel trigger method for reversely switched dynistor to eliminate residual voltage in submicrosecond pulse range, IEEE Transactions on Power Electronics, 2024, 39(4): 4202-4209.

[5] Kaijun Wen, Lin Liang, Lubin Han, et al. Expansion limitation of current channel in avalanche transistors under voltage ramp triggering conditions, IEEE Transactions on Electron Devices, 2024, 71(4): 2543-2549.

[6] Kaijun Wen, Lin Liang, Haoyang Fei, et al. Investigation on single pulse failure of avalanche transistors triggered by voltage ramps in marx bank circuits, IEEE Transactions on Power Electronics, 2024, early access.

[7] Ziyang Zhang, Lin Liang, Haoyang Fei, et al. An online correction method for inaccuracy of junction temperature monitoring caused by degradation of SiC MOSFETs, IEEE Journal of Emerging and Selected Topics in Power Electronics, 2024, early access.

[8] Zhengheng Qing, Lin Liang, Ziyang Zhang. A pulsewidth adjustable trigger method for reverse blocking diode thyristor to suppress current filamentation and improve di/dt capability, IEEE Transactions on Power Electronics, 2023, 38(9): 10895-10905.

[9] Ziyang Zhang, Lin Liang, Haoyang Fei, et al. A half-bridge-level gate-oxide failure online detection method without invading converters for SiC MOSFETs, IEEE Journal of Emerging and Selected Topics in Power Electronics, 2023, 11(3): 2545-2553.

[10] Xiaoxue Yan, Lin Liang, Zewei Yang, et al. Impact of temperature on dynamic characteristics of 4H-silicon carbide drift step recovery diodes, Microelectronics Reliability, 2023, 150: 115169.

[11] Haoyang Fei, Lin Liang, Ziyang Zhang. Investigation on temperature limitation and failure mechanism of SiC MOSFETs under avalanche conditions, Microelectronics Reliability, 2023, 150: 115106.

[12] Kaijun Wen, Lin Liang, Ziyang Zhang, et al. Leakage current induced erratic switching in Si avalanche bipolar junction transistors under overvoltage states, Journal of Applied Physics, 2023, 134(17): 175704-1-11.

[13] Han Chen, Lin Liang, Ziyang Zhang. Saturation characteristics analysis of Marx circuits based on avalanche transistors, 2023 25nd European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe, Aalborg, Denmark, Sep. 4-8, 2023.

[14] Mosai Xu, Lin Liang, Xiaoxue Yan. Optimized design and analysis of clip bonding packaging for avalanche bipolar junction transistor, The 2nd IEEE International Power Electronics and Application Symposium, IEEE PEAS 2023, Guangzhou, China, Nov. 10-13, 2023.(Best Presenter Award)

[15] Zewei Yang, Lin Liang, Xiaoxue Yan. Characteristics comparison of SiC and Si drift step recovery diode, Power Electronic Devices and Components, 2023, 6: 100042.

[16] Haoyang Fei, Lin Liang, Ziyang Zhang. Failure mechanism analysis on single pulse avalanche for SiC MOSFETs, Lecture Notes in Electrical Engineering, v 1060 LNEE, p 19-31, 2023, Conference Proceedings of 2022 2nd International Joint Conference on Energy, Electrical and Power Engineering.

[17] Hai Shang, Lin Liang, Yijian Wang, et al. Design and performance of high voltage chip-level series-connected SiC MOSFET module, IEEE Transactions on Power Electronics, 2023, 38(2): 1757-1767.

[18] Lubin Han, Lin Liang, Ziyang Zhang, et al. Understanding inherent implication of thermal resistance in double-side cooling module, IEEE Transactions on Power Electronics, 2023, 38(2): 2435-2445.

[19] Zhengheng Qing, Lin Liang, Xinyuan Huang. Reverse blocking diode thyristor with high di/dt capability for explosive foil initiator applications, IEEE Transactions on Electron Devices, 2022, 69(11): 6236-6240.

[20] Lubin Han, Lin Liang, Yijiang Wang, et al. A SiC IGBT model with accurate static and dynamic tracking capability, IEEE Transactions on Electron Devices, 2022, 69(7): 3833-3840.

[21] Zhengheng Qing, Lin Liang, Lubin Han, et al. Low-voltage turn-on characteristics of RSD for muzzle arc extinguishing of electromagnetic guns, IEEE Transactions on Plasma Science, 2022, 50(10): 3701-3706.

[22] Zewei Yang, Lin Liang, Xiaoxue Yan. Dynamic Electrical Characteristics of 4H-SiC Drift Step Recovery Diodes of High Voltage, IEEE Transactions on Plasma Science, 2022, 50(5): 1276-1281.

[23] Xinyuan Huang, Lin Liang, Ganping Wang, et al. Failure case studies of fast ionization dynistors, Microelectronics Reliability, 2021, 126: 114257.

[24] 尚海, 梁琳, 王以建, 等. 6.5kV SiC MOSFET 模块加权优化设计与实验研究, 电工技术学报, 2022, 37(19): 4911-4922.

[25] 梁琳, 颜小雪, 黄鑫远, 等. 半导体脉冲功率开关器件综述, 中国电机工程学报, 2022, 42(23): 8631-8651.

[26] Lubin Han, Lin Liang, Yong Kang. Optimized design of current, temperature and stress distributions among paralleled chips in press-pack IGBT module, CSEE Journal of Power and Energy Systems, 18 August 2022, early access. Doi: 10.17775/CSEEJPES.2021.06360. (中国电机工程学会电力电子器件专业委员会2021年会优秀论文)

[27] Xinyuan Huang, Lin Liang. A DSRD-based trigger circuit for RBDT, 2021 International Joint Conference on Energy, Electrical and Power Engineering, Huangshan, China, Sep. 17-19, 2021. (Best Paper Award)   

[28] Ziyang Zhang, Lin Liang, Hai Shang. Review of SiC MOSFET failure analysis under extreme conditions: high temperature, high frequency and irradiation, Huangshan, China, Sep. 17-19, 2021.  

[29] Yijian Wang, Lin Liang, Hai Shang, et al. Design and verification of gate driver for 6.5 kV SiC MOSFET module, 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Wuhan, China, Aug. 25-27, 2021.  

[30] Lubin Han, Lin Liang, Yong Kang, et al. Degradation mechanism of SiC MOSFET module with double side cooling for electric vehicle in accelerated aging test, PCIM Asia Conference 2022, Shanghai, China, Oct. 26-27, 2022. (University Scientist Award)

[31] Ziyang Zhang, Lin Liang, Haoyang Fei. Investigation on safe-operating-area degradation and failure modes of SiC MOSFETs under repetitive short-circuit conditions, Power Electronic Devices and Components, 2023, 4: 100026.

[32] Lubin Han, Lin Liang, Yijian Wang, et al. Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices, Power Electronic Devices and Components, 2023, 4: 100019.

[33] 尚海, 梁琳, 黄江, 等. 抗辐照SiC MOSFET模块设计与研制, 电力电子技术, 2022, 56(7): 132-134.     

[34] 杨凤鸣, 梁琳, 郑志毅. 基于系统集成可编程脉冲高压源设计与研究, 电力电子技术, 2022, 56(7): 26-28.     

[35] 杨英杰, 梁琳, 王以建, 等. 4500 V高压IGBT模块设计与实验研究, 电力电子技术, 2022, 56(1): 134-137.   

[36] 杨凤鸣, 梁琳. 用于EFIs的小型脉冲高压源设计, 电力电子技术, 2022, 56(1): 61-63.

[37] 张子扬, 梁琳, 尚海, 等. 高温栅偏和电子辐照对SiC MOSFET阈值电压影响研究, 电源学报, 2022年7月5日网络首发.

[38] Zhengheng Qing, Lin Liang, Lubin Han, et al. Suppression of muzzle arc in electromagnetic gun based on reversely switched dynistor, The 3rd International Symposium on New Energy and Electrical Technology, Anyang, China, Aug. 25-28, 2022.

[39] Rui Wang, Lin Liang, Yu Chen, et al. Self-adaptive active gate driver for IGBT switching performance optimization based on status monitoring, IEEE Transactions on Power Electronics, 2020, 35(6): 6362-6372.

[40] Lubin Han, Lin Liang, Yong Kang, et al. A review of SiC IGBT: models, fabrications, characteristics, and applications, IEEE Transactions on Power Electronics, 2021, 36(2): 2080-2093.

[41] Rui Wang, Lin Liang, Yu Chen, et al. A single voltage-balancing gate driver combined with limiting snubber circuits for series-connected SiC MOSFETs, IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, 8(1): 465-474.

[42] Lin Liang, Lianghao Liu, Shilei Wang, et al. PCB-level stress analysis of integrated module based on reversely switched dynistor, IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020, 8(2): 1604-1610.

[43] Yicheng Pi, Lin Liang, Xiaoxue Yan, et al. Measurement and analysis for time jitter of reversely switched dynistor, IEEE Transactions on Electron Devices, 2020, 67(11): 5012-5019.

[44] Lubin Han, Lin Liang, Dedong Chen, et al. Modeling and analysis of mesh pattern influences on DBC thermal cycling reliability, Microelectronics Reliability, 2020, 110: 113645.

[45] Xiaoxue Yan, Lin Liang, Xinyuan Huang, et al. 4H-SiC drift step recovery diode with super junction for hard recovery, Materials, 2021, 14(3): 684-1-10.

[46] Yicheng Pi, Lin Liang, Xiaoxue Yan, et al. A method to design RSD-based pulse circuit without magnetic switch, CSEE Journal of Power and Energy Systems, 2023, 9(1): 306-314.

[47] Francesco Iannuzzo. Modern Power Electronic Devices - Physics, applications, and reliability, The Institution of Engineering and Technology, IET, 2020. （参编第2章）

[48] Xiaoxue Yan, Lin Liang, Ziyue Wang, et al. Optimization Design for SiC Drift Step Recovery Diode (DSRD), 2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe, Lyon, France, Sep. 7-11, 2020.

[49] Lubin Han, Lin Liang, Wei Xin, et al. Influence of Wire-Bonding Layout on Reliability in IGBT Module, 2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe, Lyon, France, Sep. 7-11, 2020.  

[50] Lubin Han, Lin Liang, Yong Kang. A SiC IGBT behavioral model with high accuracy and fast convergence, 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Suita, Japan, Sep. 23-25, 2020.

[51] Xiaoxue Yan, Lin Liang, Xinyuan Huang. Design and fabrication for high-voltage silicon carbide drift step recovery diode, 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Suita, Japan, Sep. 23-25, 2020.  

[52] Yingjie Yang, Lin Liang, Hai Shang. Design of press-pack packaging for high voltage SiC DSRD stack, 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Suita, Japan, Sep. 23-25, 2020.

[53] Hai Shang, Lin Liang, Lubin Han. Design key points and multi-field simulations for half bridge module of converter valve based on SiC IGBT, 2020 IEEE 4th Conference on Energy Internet and Energy System Integration: Connecting the Grids Towards a Low-Carbon High-Efficiency Energy System, EI2 2020, Wuhan, China, Oct. 30, 2020, pp. 1031-1036.

[54] 韩鲁斌, 梁琳, 康勇. 压接IGBT器件并联子模组热阻分布实验研究. 中国电力, 2020, 83(12): 37-44.

[55] Lubin Han, Lin Liang, Zihao Zhao, et al. Optimized design of chips layout in press-pack IGBT module, the 21st European Conference on Power Electronics and Applications, Genova, Italy, Sept. 3-5, 2019.

[56] Xiaoxue Yan, Lin Liang, Ludan Zhang. Simultaneous formation of Ni/Ti/Al/Ag ohmic contacts to both P- and N-type for 4H-SiC RSD, 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Taipei, Taiwan, May 23-25, 2019.

[57] Ziyue Wang, Lin Liang, Ludan Zhang. Study of passivation layer on bevel edge termination for SiC RSD, 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Taipei, Taiwan, May 23-25, 2019.

[58] Lin Liang, Wei Li, Sichao Li, et al. Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric, AIP Advances, 8, 125314 (2018).

[59] Lubin Han, Lin Liang, Rui Wang, et al. Press-pack and soldered packaging IGBT modules for pulsed power applications, 2nd International Electirical and Energy Conference, Beijing, China, Nov. 4-6, 2018.

[60] Fang Luo, Lin Liang, David Huitink, et al. Advanced power module packaging and integration structures for high frequency power  conversion: from silicon to GaN, 电力电子技术, 2018, 52(8): 9-18.

[61] Lin Liang, Ming Pan, Ludan Zhang, et al. Positive-bevel edge termination for SiC reversely switched dynistor, Microelectronic Engineering, 161 (2016) 52-55.

[62] Lin Liang, Quan Wei, Yuehui Yu. Two-dimensional numerical model and turn-on performance simulation of reversely switched dynistor, IEEE Transactions on Power Electronics, 2014, 29(1): 522-528.

[63] Lin Liang, Cheng Liu, Changdong Chen, et al. Study on switching characteristics of reversely switched dynistor with an N-buffer layer, IEEE Transactions on Plasma Science,2015, 43(6): 2032-2037.

[64] Changdong Chen, Lin Liang. Investigation and comparison on switching performance of semiconductor pulsed power devices, IEEE Transactions on Plasma Science, 2015, 43(9): 3304-3309.

[65] Liang Yu, Lin Liang, Feilong Li, et al. Design and study on efficient triggering circuit for reversely switched dynistor, IEEE Transactions on Plasma Science, 2014, 42(2): 350-357.

[66] 王建, 梁琳, 李有康, 等. 双基区结构快速软恢复二极管特性研究. 电工技术学报, 2015, 30(18): 1-7.

[67] 梁琳, 余亮, 吴拥军, 余岳辉. 脉冲功率开关反向开关晶体管的结构优化与特性测试研究. 强激光与粒子束, 2012, 24(4): 876-880.

[68] 洪武, 梁琳, 余岳辉. 两步式放电改善反向开关晶体管开通特性研究. 物理学报, 2012, 61(5): 058501-1-058501-7.

[69] 梁琳, 余岳辉. 半导体脉冲功率开关发展综述. 电力电子技术, 2012, 46(12):42-45.

[70] 余岳辉, 梁琳. 脉冲功率器件及其应用. 北京: 机械工业出版社, 2010.

[71] Lin Liang, Yuxiong Shu, Ludan Zhang, et al. Orthogonal optimization design for structural parameters of SiC reversely switched dynistor (RSD), the 28th International Symposium on Power Semiconductor Devices and ICs, Prague, Czech Republic, Jun. 12-16, 2016, pp. 491-494.

[72] Lin Liang, Alex Q. Huang, Cheng Liu, et al. SiC reversely switched dynistor (RSD) for pulse power application, the 27th International Symposium on Power Semiconductor Devices and ICs, Hong Kong, China, May 10-14, 2015, pp. 293-296.

[73] Lin Liang, Ludan Zhang, Ming Pan, et al. Reversely switched dynistor: from Si to SiC, 2016 IEEE International Power Modulator and High Voltage Conference, San Francisco, CA, USA, Jul. 5-9, 2016, pp. 32-35.

[74] Lin Liang, Quan Wei, Wu Hong, et al. Reducing turn-on dissipation of RSD from application, 2012 IEEE International Power Modulator and High Voltage Conference, San Diego, CA, USA, Jun. 3-7, 2012, pp. 73-76.

[75] Lin Liang, Changdong Chen, Fang Luo. Numerical model and experimental study on comparison of semiconductor pulsed power devices, the 31st Annual IEEE Applied Power Electronics Conference and Exposition, Long Beach, CA, USA, Mar. 20-24, 2016, pp. 2981-2985.

[76] Lin Liang, Ming Pan, Ludan Zhang, et al. Key structure and process for pulsed power switch SiC RSD, the 3rd IEEE Workshop on Wide Bandgap Power Devices and Application, Blacksburg, VA, USA, Nov. 2-4, 2015, pp. 170-173.

[77] Lin Liang, Alex Q. Huang, Woongje Sung, et al. Turn-on capability of 22 kV SiC emitter turn-off (ETO) thyristor, the 3rd IEEE Workshop on Wide Bandgap Power Devices and Application, Blacksburg, VA, USA, Nov. 2-4, 2015, pp. 192-195.

[78] Tian Tian, Lin Liang, Wei Xin, et al. Influences of DBC metal layout on the reliability of IGBT power modules, the 3rd IEEE Workshop on Wide Bandgap Power Devices and Application, Blacksburg, VA, USA, Nov. 2-4, 2015, pp. 166-169.