·Paper Publications
(24) Qianlan Hu, Sichao Li, Tiaoyang Li, Xin Wang, Xuefei Li and Yanqing Wu. Channel engineering of normally-off AlGaN/GaN MOS-HEMTs by atomic layer etching and high-k dielectric. IEEE Electron Device Letters 2018, 39, 1377-1380.
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(23) Lin Liang, Wei Li, Sichao Li, Xuefei Li, and Yanqing Wu. Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric. AIP Advances 2018, 8, 125314.
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(25) Qingguo Gao, Zhenfeng Zhang, Xiaole Xu, Jian Song, Xuefei Li, Yanqing Wu. Scalable high performance radio frequency electronics based on large domain bilayer MoS2. Nature Communications 2018, 9, 4778.