(3) Xinhang Shi, Xin Wang, Shiyuan Liu, Qi Guo, Lei Sun, Xuefei Li, Ru Huang, and Yanqing Wu. High-performance bilayer WSe2 pFET with record Ids = 425 μA/μm and Gm = 100 μS/μm at Vds = -1 V by direct growth and fabrication on SiO2 Substrate, 3-7 Dec. 2022, 2022 IEEE International Electron Devices Meeting (IEDM).
发布时间：2023-04-10
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- 上一条：(2) Xinhang Shi, Xuefei Li, Qi Guo, Min Zeng, Xin Wang, and Yanqing Wu. Ultrashort channel chemical vapor deposited bilayer WS2 field-effect transistors. Applied Physics Reviews 2023, 10, 011405.
- 下一条：(4) Xinhang Shi, Xuefei Li, Qi Guo, Han Gao, Min Zeng, Yibo Han, Shiwei Yan, and Yanqing Wu. Improved self-heating in short-channel monolayer WS2 transistors with high-thermal conductivity BeO dielectrics. Nano Letters 2022, 22, 7667-7673.