(20) Shengman Li, Mengchuan Tian, Chengru Gu, Runsheng Wang, Mengfei Wang, Xiong Xiong, Xuefei Li, Ru Huang and Yanqing Wu. BEOL compatible 15-nm channel length ultrathin indium-tin-oxide transistors with Ion = 970 μA/μm and On/off ratio Near 10^11 at Vds = 0.5 V, 7-11 Dec. 2019, 2019 IEEE International Electron Devices Meeting (IEDM).
发布时间：2023-04-10
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