·Paper Publications
J. J. Zhang, H. Liu, H. J. Sun*, P. Yan,Y. Li, S. J. Zhong, S. Xie, R. J. Li, and X. S. Miao, Charged defects-induced resistive switching in Sb2Te3memristor, Journal of Electronic Materials, 45(2), 1154-1159 (2016).
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Yang Zhang, Xiaoping Wang*, Yi Li, and Eby G. Friedman, Memristive model for synaptic circuits, IEEE Transactions on Circuits and Systems II: Express Briefs, 64 (7), 767-771, 2016.
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Y. X. Zhou, Y. Li, L. Xu, S. J. Zhong, R. G. Xu, and X. S. Miao*, A hybrid memristor-CMOS XOR gate for nonvolatile logic computation, Physica Status Solidi A: Applications and Materials Science, 213(4), 1050-1054 (2016).