·Paper Publications
Xiao-Di Huang, Yi Li*, Hao-Yang Li, Kan-Hao Xue, Xingsheng Wang, and Xiang-Shui Miao, Forming-free, fast, uniform, and high endurance resistive switching from cryogenic to high temperatures in W/AlOx/Al2O3/Pt bilayer memristor, IEEE Electron Device Letters, 41(4), 2020 , DOI: 10.1109/LED.2020.2977397.
Release time:2020-11-30 Hits:
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Xiao-Di Huang, Yi Li*, Hao-Yang Li, Yi-Fan Lu, Kan-Hao Xue, and Xiang-Shui Miao, Enhancement of DC/AC resistive switching performance in AlOx memristor by two-technique bilayer approach, Applied Physics Letters, 116(17), 173504, 2020. DOI :10.1063/5.0006850.
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Jia Chen, Wen-Qian Pan, Yi Li*, Yu-Hui He, Rui Kuang, Yu-Ting Su, Chih-Yang Lin, Gui-Rong Feng, Nian Duan, Hao-Xuan Zheng, Cheng-Hsien Wu, Ting-Chang Chang*, Simon M. Sze and Xiang-Shui Miao, High precision symmetric weight update of memristor by gate voltage ramping method for convolutional neural network accelerator, IEEE Electron Device Letters, 41(3), 353-356, 2020 , DOI: 10.1109/TED.2020.2967401.