2025-5-24，Saturday
·Paper Publications
- [61] Y. X. Zhou, Y. Li, L. Xu, S. J. Zhong, H. J. Sun, and X. S. Miao*, 16 Boolean logics in three steps with two anti-serially connected memristors, Applied Physics Letters, 106, 233502 (2015)..
- [62] Y. Li,† Y. P. Zhong,† J. J. Zhang, L. Xu, Q. Wang, H. J. Sun, H. Tong, X. M. Cheng and X. S. Miao*, Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems, Scientific Reports, 4, 4906 (2014)..
- [63] Y. Li,† Y. P. Zhong,† L. Xu,† J. J. Zhang, X. H. Xu, H. J. Sun, and X. S. Miao*, Ultrafast synaptic events in a chalcogenide memristor, Scientific Reports, 3, 1619 (2013)..
- [64] Y. Li, Y. P. Zhong, J. J. Zhang, X. H. Xu, Q. Wang, L. Xu, H. J. Sun, and X. S. Miao*, Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5, Applied Physics Letters, 103, 043501 (2013)..
- [65] Y. Li, Y. P. Zhong, Y. X. Zhou, Y. F. Deng, L. Xu, and X. S. Miao*, AND, OR, NOT Boolean logic in phase change memory, Journal of Applied Physics, 114, 234503 (2013)..
- [66] J. J. Zhang, H. J. Sun*, Y. Li, Q. Wang, X. H. Xu, and X. S. Miao, AgInSbTe memristor with gradual resistance tuning, Applied Physics Letters, 102, 183513 (2013)..
- [67] X. M. Long, X. S. Miao*, J. J. Sun, X. M. Cheng, H. Tong, Y. Li, D. H. Yang, J. D. Huang, and C. Liu, Dynamic switching characteristic dependence on sidewall angle for phase change memory, Solid-State Electronics, 67, 1 (2012)..