Cheng gang Shao
·Paper Publications
Document Code: 055008
First Author: Cheng-Gang Qin
Co-author: Cheng-Gang Qin; Yu-Jie Tan,Cheng-Gang Shao
Journal: Class. Quantum Grav.
Included Journals: SCI
Volume: 36
Date of Publication: 2019-03-03
Links to published journals: https://doi.org/10.1088/1361-6382/ab01ae
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Pre One::
Coexistence of digital and analog resistive switching with low operation voltage in oxygen-gradient HfOx memristors, Zhaonan Li, Baoyi Tian, Kan-Hao Xue, Biao Wang, Ming Xu, Hong Lu, Huajun Sun*, and Xiangshui Miao, IEEE Electron Device Letters 40, 1068 (2019)
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Next One::
Self-compliance characteristics and switching degradation in TaOx-based memristors, Mingrui Jiang, Biao Wang, Kan-Hao Xue, Nian Liu, Huajun Sun*, Hong Lu, and Xiangshui Miao, Applied Physics Express 12, 104003 (2019)