·Paper Publications
AgInSbTe memristor with gradual resistance tuning, Zhang J.J., Sun H.J*, Li Y., Wang Q., Xu X.H., Miao X.S., Applied Physics Letters,102(18), 183513, 2013
Release time:2021-05-31 Hits:
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Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5,Li Y., Zhong Y.P., Zhang J.J, Xu X.H.,Wang Q., Xu L, Sun H.J, Miao X.S., Applied Physics Letters,103(4), 043501, 2013.
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Ultrafast synaptic events in a chalcogenide memristor,Y.Li,Y.P.Zhong,L.Xu,J.J. Zhang,X.H.Xu,H.J.Sun,X.S.Miao,Scientific Reports,3,1619,2013.