·Paper Publications
Charged defects-induced resistive switching in Sb2Te3 memristor,J.J.Zhang,N.Liu, HJ Sun*,P.Yan,Y.Li.S. J.Zhong,S.Xie,R.J.Li,X.S.Miao,Journal of Electronic Materials, 45(2) 1154-1159 (2016)
Release time:2021-05-31 Hits:
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Conductance quantization in an AgInSbTe-based memristor at nanosecond scale, L Jiang,L Xu,JW Chen,P Yan,KH Xue,HJ Sun*,XS Miao,Applied Physics Letters, 109(15):153506 (2016)
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Conducting mechanisms of forming-free TiW/Cu2O/Cu memristive devices,P. Yan,Y. Li,Y. J. Hui,S. J. Zhong,Y. X. Zhou,L. Xu, N. Liu,H. Qian,HJ Sun*,and X. S. Miao,Applied Physics Letters,107, 083501 (2015)