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教授 博士生导师
所在单位：集成电路学院
学历：研究生(博士)毕业
学位：博士学位
毕业院校：华中科技大学
学科：微电子学与固体电子学曾获荣誉：
2024 华中科技大学青年五四奖章
2022 华为奥林帕斯先锋奖
2020 湖北省技术发明一等奖（排名第2）
2013 湖北省年度“十大科技事件”
2013 湖北省优秀博士学位论文
2014 湖北省优秀学士学位论文指导教师
2015 华中科技大学教师教学竞赛二等奖
2017 华中科技大学光学与电子信息学院“我最喜爱的教师班主任“
2020 华中科技大学光学与电子信息学院突出贡献一等奖
论文类型：期刊论文
第一作者：王伦
通讯作者：童浩
合写作者：缪向水,童浩,陈江西,刘梓轩,温晋宇
发表刊物：IEEE Electron Device Letters
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：44
期号：7
页面范围：1096-1099
关键字：Intercalated layer, GeTe, ovonic threshold
switching (OTS), selector, thermal stability
DOI码：10.1109/led.2023.3272884
发表时间：4504-07-01
摘要：Thermal stability and switching speed of
ovonic threshold switching (OTS) selector are key elements for its high-speed memory application. However, current methods tend to introduce over complicated elements and even toxic elements which will improve fabrication process complexity and be environment unfriendly. In this work, we studied a Ge-Te based OTS selector with Ge intercalated layers inserted in OTS layer. Through Poole-Frenkel model fitting, we found that the Ge intercalated layers introduced energy barrier, reducing device off-current while improving its thermal stability. The optimized device showed a thermal stability improvement of more than 180◦C. In the meantime, the optimized device had good switching performance with fast switching speed of 8.2 ns, low off-current of 10 nA, and endurance of 1.3 × 1010. After a 350◦C annealed process, the device performance showed good uniformity and almost no degradation. This work provides experiment guidance of the high thermal stability requirement for OTS selectors
发布期刊链接：https://ieeexplore.ieee.org/abstract/document/10115424