论文类型：期刊论文
第一作者：王伦
通讯作者：童浩
合写作者：缪向水,陈江西,朱荣江,温晋宇
发表刊物：Applied Physics Letters
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：121
期号：19
页面范围：193501
关键字：Ab-initio molecular dynamics, Density functional theory, Exchange correlation functionals, First-principle calculations, Electrical properties and parameters, Current-voltage characteristic, Materials properties, Separation processes, Phase change memories
DOI码：10.1063/5.0127177
发表时间：4487-02-01
摘要：The endurance of ovonic threshold switching (OTS) selectors is a key element for memory application. However, multi-element system for OTS in recent studies will induce element or phase segregation and lead to device failure. Since pure Te based device characterizes relatively high off current, in this work, we studied a Te-rich Ge–Te based OTS selector. We first conducted a failure analysis on Ge–Te based OTS selector. Through first-principles calculations, we found that a relatively larger Ge concentration in the Ge–Te system may lead to a worse device endurance after continuous operation due to the migration of Ge atoms. Experiments further proved that device endurance can be improved more than two orders of magnitude through decreasing Ge concentration and the element segregation is greatly weakened by the composition close to elemental. Finally, a significantly improved endurance of 2  1010 was realized in Ge10Te90 based OTS selectors. In the meantime, the Ge10Te90 based OTS selectors show good switching performance and potential for use in memory applications.
发布期刊链接：https://pubs.aip.org/aip/apl/article/121/19/193501/2834756/Failure-mechanism-investigation-and-endurance