论文类型：期刊论文
第一作者：王伦,陈子琪
通讯作者：童浩
合写作者：缪向水,温晋宇
发表刊物：IEEE Transactions on Electron Devices
所属单位：江汉大学、华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
页面范围：2103478
关键字：Device area, ovonic threshold switch (OTS), pulse falling edge, pulse sequence, threshold voltage.
DOI码：10.1109/TED.2022.3169118
发表时间：4471-08-01
摘要：—In this work, we studied the threshold voltage V th for an ovonic threshold switch (OTS) device in a high-frequency continuous operation. By applying a pulse sequence with small pulse intervals, the dependence of V th on the falling edge of the prior pulse has been investigated in the Te-based OTS device. The results indicate that the V th presents a Weibull distribution in the pulse sequence, and the V th distribution drifts nonmonotonically with the pulse falling edge. Meanwhile, the drift tendency of the V th distribution was found depending on the device area. Furthermore, the recovery process and the time-resolved current profiles in the device operation have been investigated to further study the V th drift. The results indicate that the V th drift in continuous device operation is controllable and results from a combination of the effects of heat accumulation and the recovery process. The V th drift at high-frequency operating can be reduced by optimizing the device lateral dimension according to the mapping results of the V th. Our results can guide the design and operation of the OTS device with a low V th drift requirement
发布期刊链接：https://ieeexplore.ieee.org/document/9764828