论文类型：期刊论文
第一作者：陈子琪
通讯作者：缪向水
合写作者：蔡旺,王伦,童浩
发表刊物：IEEE Transactions on Electron Devices
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：68
期号：11
页面范围：5592-5597
关键字：Capacitance behavior, operating speed, ovonic threshold switch (OTS), phase-change memory (PCM)
DOI码：10.1109/TED.2021.3114264
发表时间：4446-09-01
摘要：In this work, the time-delay effect on device operation caused by capacitance is studied in terms of phase-change memory (PCM) integrated with an ovonic threshold switch (OTS) selector. The capacitance studied in this work is the intrinsic capacitance associated with capacitive reactance of the PCM itself. The capacitance of the PCM in the amorphous state was measured, and it presents an exponential dependence on voltage bias. Through the simulation model of an OTS-PCM integrated device that considering the measured capacitance behavior, the time-delay characteristics of the integrated device for the SET process with various pulses were investigated. Results indicate that the onset of the threshold switching (TS) is delayed in the PCM but occurs early in the OTS with capacitance in the integrated device. In addition, it is found that the variable capacitance behavior can not only minimize the delay effect, but also accelerate the SET operation under certain conditions in the integrated device. Our results can provide practical guidance for the design of fast operating devices.
发布期刊链接：https://ieeexplore.ieee.org/abstract/document/9555378