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教授 博士生导师
所在单位：集成电路学院
学历：研究生(博士)毕业
学位：博士学位
毕业院校：华中科技大学
学科：微电子学与固体电子学曾获荣誉：
2024 华中科技大学青年五四奖章
2022 华为奥林帕斯先锋奖
2020 湖北省技术发明一等奖（排名第2）
2013 湖北省年度“十大科技事件”
2013 湖北省优秀博士学位论文
2014 湖北省优秀学士学位论文指导教师
2015 华中科技大学教师教学竞赛二等奖
2017 华中科技大学光学与电子信息学院“我最喜爱的教师班主任“
2020 华中科技大学光学与电子信息学院突出贡献一等奖
论文类型：期刊论文
第一作者：陈子琪
通讯作者：童浩
合写作者：缪向水,顾伟,赵锐哲,王伦,李鑫
发表刊物：Applied Physics Letters
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：118
期号：20
页面范围：203502
DOI码：10.1063/5.0048883
发表时间：4433-03-01
摘要：In this paper, we present a multiple layer device for investigating the impact of electric field on the conductance switching of GeTe phase change material excluding the contribution from Joule heat. The device includes a dielectric layer with excellent current-blocking which can result in a large electric field generated in the amorphous GeTe film and almost no current. With the generated electric field far beyond its threshold value for the conductance switching, our experimental data indicate that the conductance switching has not happened in the GeTe film. This indicates that the ovonic threshold switching (OTS) could not be induced by the purely electric field in amorphous chalcogenide film. Meanwhile, a modified thermal-assist model based on the Poole–Frenkel (PF) mechanism has been proposed to verify the thermal assistance is indispensable in the OTS process. And the modified model is well applied on the GeTe devices with different scales, which further supports the current experimental conclusion. This contributes to the further study of the OTS mechanism and application of the phase-change memory (PCM).
发布期刊链接：https://pubs.aip.org/aip/apl/article/118/20/203502/40359