论文类型：期刊论文
第一作者：张立伟
通讯作者：徐明
合写作者：缪向水,周鹏,童浩,杨哲,熊昌鹰,刘龙,辜融川,麦贤良
发表刊物：Advanced Electronic Materials
所属单位：华中科技大学、复旦大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：7
期号：5
页面范围：2100164
关键字：Ga-Ge-Sb、multilevel cells、nanocrystals、phase-change memory、phase separation
DOI码：10.1002/aelm.202100164
发表时间：4428-06-01
摘要：Phase-change memory (PCM), using the fast and reversible transition between crystal and glass to store binary data, is a promising candidate for next-generation information storage and computing technologies. Recording more than one bit of information on each memory cell, known as multilevel cell (MLC) technology, can greatly increase the data density of PCMs. In this paper, the MLC capability in a phase change material Ge-Ga-Sb (GGS) is explored. Using the “SET” operation with increasing voltage amplitudes on this PCM cell in a 250 nm pillar structure device, three resistance levels are achieved and can be stabilized within large operating voltage windows, allowing large tolerance of SET voltage variation which may lead to the overlap of the neighboring resistance levels. It is discovered that the additional resistance level other than “0” and “1” is enabled by compositional phase separation in the nanocrystalline GGS, as revealed via atom probe tomography and electronic microscopy. The device also shows small resistance drift (ν = 0.025) in amorphous state, about four times lower than prototypical Ge-Sb-Te-based PCMs, stabilizing it against time variation. Meanwhile, high thermal stability (Tc ≈ 300 °C) in GGS-based device can also facilitate the practical applications in some extreme conditions.
发布期刊链接：https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202100164#pane-pcw-references