论文类型：期刊论文
第一作者：马平
通讯作者：缪向水
合写作者：程晓敏,徐明,童浩
发表刊物：Applied Physics Letters
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：117
期号：2
页面范围：022109
DOI码：10.1063/5.0009362
发表时间：4402-08-01
摘要：The nanosize confined effect is believed to contribute to improving the resistance drift in nanophase change devices. However, the smaller dimension of device designs is limited by plane lithography techniques. Phase change memory with a confined thickness of ultrathin GeTe layers is fabricated to overcome the limit of current plane lithography. Those memory cells composed of two-dimensional materials present a suppressed resistance drift in their amorphous phase. The drift exponent is reduced to 0.05 for 3 nm GeTe layers. Combined with Raman spectroscopy and ab initio molecular dynamics simulations, the structural relaxation process is described as the decay of tetrahedral-bonded sites. Tetrahedrons in ultrathin films are more stable than those in bulk materials. The local motifs of amorphous GeTe ultrathin films are covalently bonded and highly ordered in a short range. The majority of highly ordered tetrahedral clusters prevents spontaneous structural relaxation and leads to high stability in amorphous states, which helps to stop intrinsic fluctuations in physical properties of SET and RESET states, without an extra processing cost.
发布期刊链接：https://pubs.aip.org/aip/apl/article/117/2/022109/39435/Suppressed-resistance-drift-from-short-range-order