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教授 博士生导师
所在单位：集成电路学院
学历：研究生(博士)毕业
学位：博士学位
毕业院校：华中科技大学
学科：微电子学与固体电子学曾获荣誉：
2024 华中科技大学青年五四奖章
2022 华为奥林帕斯先锋奖
2020 湖北省技术发明一等奖（排名第2）
2013 湖北省年度“十大科技事件”
2013 湖北省优秀博士学位论文
2014 湖北省优秀学士学位论文指导教师
2015 华中科技大学教师教学竞赛二等奖
2017 华中科技大学光学与电子信息学院“我最喜爱的教师班主任“
2020 华中科技大学光学与电子信息学院突出贡献一等奖
论文类型：期刊论文
第一作者：何明泽
通讯作者：缪向水,童浩
合写作者：徐明,程晓敏,万代兴,林琪,钱航,何达,何明泽
发表刊物：IEEE Electron Device Letters
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：40
期号：10
关键字：Phase Change Memory (PCM), Ge2Sb2Te5
(GST), Multilevel Cell (MLC), low RESET current density,
disorder, pre-operation, storage density, 3D cross-point.
DOI码：10.1109/led.2019.2935890
发表时间：4373-09-01
摘要：We have fabricated a pillar structure phase change memory (PCM) with the prototypical phase change material Ge2Sb2Te5. Using a Low Current SET (LCS) pre-operation, the devices can operate with an ultralow RESET current density and have multilevel cell (MLC) capability, and these features both contribute to high storage density. Specifically, the RESET current density is only 4.84 MA/cm2, which is lowest among all the CMOS compatible PCM devices, and this ultra-low RESET current density enables the possibility to link with a two-terminal selector for 3D cross-point application. Meanwhile LCS makes MLC operation of our PCM more stable with a low operating current. In summary, this LCS pre-operation can greatly increase the storage density both by enabling integration with selectors for 3D cross-point and by stabilizing MLC operation when maintaining the feature size of PCM devices.
发布期刊链接：https://ieeexplore.ieee.org/document/8805146