论文类型：期刊论文
第一作者：于振海,郭彦荣,徐萌
通讯作者：徐明
合写作者：C.Z.Wang,陈超,王松友,何启明,缪向水,徐开朗,程晓敏,童浩
发表刊物：Journal of Materials Chemistry C
所属单位：华中科技大学，复旦大学，上海科技大学，美国爱荷华州立大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：7
期号：29
页面范围：9025-9030
DOI码：10.1039/C9TC02963J
发表时间：4367-05-01
摘要：Phase change memory is an emerging nonvolatile memory technology, recently becoming the center of attention to bridge the speed gap between fast dynamic random access memory and slow flash-based solid-state drives. Lately, CrGeTe3 has been investigated as a special phase change material with an inverse resistance and density change. This material has excellent properties such as good thermal stability, ultralow-energy glass formation process and almost zero mass-density change upon crystallization. Here, we analyzed the amorphous structure of this abnormal material in detail through ab initio simulations and discovered that the metallic-like tight atomic packing is the origin of the high carrier concentration and high mass density in the amorphous phase. Furthermore, the bonding analysis confirms that it is the short Cr-Cr bonds that lead to high packing efficiency in the amorphous local order. Our results discovered the material gene of the amorphous CrGeTe3, paving the way for the design of high-performance memory devices based on this material.
发布期刊链接：https://www.researchgate.net/publication/334186878_Understanding_CrGeTe3_an_abnormal_phase_change_material_with_inverse_resistance_and_density_contrast