论文类型：期刊论文
第一作者：钱航
通讯作者：童浩
合写作者：缪向水,徐明,周凌珺,季宏凯,何明泽,童浩
发表刊物：SCIENTIFIC REPORTS
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：8
DOI码：10.1038/s41598-017-18964-w
发表时间：4343-12-01
摘要：The tunable disorder of vacancies upon annealing is an important character of crystalline phase-change material Ge2Sb2Te5 (GST). A variety of resistance states caused by dierent degrees of disorder can lead to the development of multilevel memory devices, which could bring a revolution to the memory industry by signicantly increasing the storage density and inspiring the neuromorphic computing. This work focuses on the study of disorder-induced carrier localization which could result in multiple resistance levels of crystalline GST. To analyze the eect of carrier localization on multiple resistant levels, the intrinsic eld eect (the change in surface conductance with an applied transverse electric eld) of crystalline GST was measured, in which GST lms were annealed at dierent temperatures. The eld eect measurement is an important complement to conventional transport measurement techniques. The eld eect mobility was acquired and showed temperature activation, a hallmark of carrier localization. Based on the relationship between eld eect mobility and annealing temperature, we demonstrate that the annealing shifts the mobility edge towards the valence-band edge, delocalizing more carriers. The insight of carrier transport in multilevel crystalline states is of fundamental relevance for the development of multilevel phase change data storage.
发布期刊链接：https://www.nature.com/articles/s41598-017-18964-w