论文类型：期刊论文
第一作者：杨冬冬
通讯作者：缪向水
合写作者：周凌珺,童浩
发表刊物：Chinese Physics Letters
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：34
期号：12
页面范围：1273011-5
DOI码：10.1088/0256-307X/34/12/127301
发表时间：4293-04-01
摘要：Bi2Te3 thin films and GeTe/B2Te3 superlattices of different thicknesses are prepared on the silicon dioxide substrates by magnetron sputtering technique and thermally annealed at 573 K for 30 min. Thermoelectric (TE) measurements indicate that optimal thickness and thickness ratio improve the TE performance of Bi2Te3 thin films and GeTe/B2Te3 superlattices, respectively. High TE performances with figure-of-merit (ZT) values as high as 1.32 and 1.56 are achieved at 443 K for 30 nm and 50 nm Bi2Te3 thin films, respectively. These ZT values are higher than those of p-type Bi2Te3 alloys as reported. Relatively high ZT of the GeTe/B2Te3 superlattices at 300–380 K were 0.62–0.76. The achieved high ZT value may be attributed to the unique nano- and micro-structures of the films, which increase phonon scattering and reduce thermal conductivity. The results indicate that Bi2Te3-based thin films can serve as high-performance materials for applications in TE devices.
发布期刊链接：https://iopscience.iop.org/article/10.1088/0256-307X/34/12/127301