论文类型：期刊论文
第一作者：余念念
通讯作者：缪向水
合写作者：缪向水,童浩
发表刊物：Applied Physics Letters
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
关键字：Ab-initio molecular dynamics, Phonons, Crystalline solids, Amorphous materials, Polycrystalline material, Raman scattering, Raman spectroscopy, Thin films, Transmission electron microscopy, Phase change memories
DOI码：10.1063/1.4894864
发表时间：4187-07-01
摘要：We report the drastic effect of film thickness on the structure and corresponding phonon behavior of crystalline GeTe ultrathin film. GeTe film with film thickness at 5 nm still shows good crystallization behavior and this highly scaled dimension confined almost all the crystallites to have preferred [111] orientation. The large specific interface area in ultrathin film give rise to the increase of tetrahedral coordinated Ge atoms and a rising Raman mode at low frequency is observed. These findings give implications for the thermal and electrical characters of phase change ultrathin films and thus for relevant scaling properties of Phase Change Memory.
发布期刊链接：https://pubs.aip.org/aip/apl/article/105/12/121902/1020200/Structure-and-phonon-behavior-of-crystalline-GeTe