·Paper Publications
(2017f) Ze-Han Wu, Kan-Hao Xue* and Xiang-Shui Miao, Filament-to-dielectric band alignments in TiO2 and HfO2 resistive RAMs, Journal of Computational Electronics 16, 1057 (2017).
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(2018a) Kan-Hao Xue* and Xiang-Shui Miao*, Oxygen vacancy chain and conductive filament formation in hafnia, Journal of Applied Physics 123, 161505 (2018).
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(2017e) Yi Li*, Kang-Sheng Yin, Mei-Yun Zhang, Long Cheng, Ke Lu, Shi-Bing Long*, Yaxiong Zhou, Zhuorui Wang, Kan-Hao Xue, Ming Liu and Xiang-Shui Miao*, Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO2-based memristor, Applied Physics Letters 111, 213505 (2017).