·Paper Publications
(2021c) Yun-Lai Zhu, Kan-Hao Xue, Xiao-Min Cheng*, Chong Qiao, Jun-Hui Yuan, Li-Heng Li and Xiang-Shui Miao, Uniform and robust TiN/HfO2/Pt memristor through interfacial Al-doping engineering, Applied Surface Science 550, 149274 (2021).
Release time:2021-12-24 Hits:
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(2021d) Tian-Qing Wan, Yi-Fan Lu, Jun-Hui Yuan, Hao-Yang Li, Yi Li*, Xiao-Di Huang, Kan-Hao Xue* and Xiang-Shui Miao, 12.7 MA/cm2 on-current density and high uniformity realized in AgGeSe/Al2O3 selectors, IEEE Electron Device Letters 42, 613 (2021).
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(2021b) Na Bai#, Baoyi Tian#, Ge-Qi Mao, Kan-Hao Xue*, Tao Wang, Jun-Hui Yuan, Xiaoxin Liu, Zhaonan Li, Shen Guo, Zuopai Zhou, Nian Liu, Hong Lu, Xiaodong Tang, Huajun Sun* and Xiangshui Miao, Homo-layer hafnia-based memristor with large analog switching window, Applied Physics Letters 118, 043502 (2021).