·Paper Publications
- [41] (2019i) Jinfeng Lin, Qiling Lu, Xiao Wu*, Hailing Sun, Cong Lin, Tengfei Lin, Kan-Hao Xue, Xiangshui Miao, Baisheng Sa* and Zhimei Sun, In situ boost and reversible modulation of dual-mode photoluminescence under an electric field in a tape-casting-based Er-doped K0.5Na0.5NbO3 laminar ceramic, Journal of Materials Chemistry C 7, 7885 (2019)..
- [42] (2019h) Zhaonan Li, Baoyi Tian, Kan-Hao Xue, Biao Wang, Ming Xu, Hong Lu, Huajun Sun* and Xiangshui Miao, Coexistence of digital and analog resistive switching with low operation voltage in oxygen-gradient HfOx memristors, IEEE Electron Device Letters 40, 1068 (2019)..
- [43] (2019g) Yun-Lai Zhu#, Jun-Hui Yuan#, Ya-Qian Song, Sheng Wang, Kan-Hao Xue*, Ming Xu, Xiao-Min Cheng* and Xiang-Shui Miao, Two-dimensional silicon chalcogenides with high carrier mobility for photocatalytic water splitting, Journal of Materials Science 54, 11485 (2019)..
- [44] (2019f) Bo Yang#, Weicheng Pan#, Haodi Wu#, Guangda Niu*, Jun-Hui Yuan, Kan-Hao Xue, Lixiao Yin, Xinyuan Du, Xiang-Shui Miao, Xiaoquan Yang, Qingguo Xie and Jiang Tang*, Heteroepitaxial passivation of Cs2AgBiBr6 wafers with suppressed ionic migration for X-ray imaging, Nature Communications 10, 1989 (2019)..
- [45] (2019e) Qing Luo#, Haili Ma#, Hailei Su, Kan-Hao Xue, Rongrong Cao, Zhaomeng Gao, Jie Yu, Tiancheng Gong, Xiaoxin Xu, Jiahao Yin, Peng Yuan, Lu Tai, Danian Dong, Shibing Long, Qi Liu, Xiang-Shui Miao, Hangbing Lv* and Ming Liu, Composition-dependent ferroelectric properties in sputtered HfxZr1-xO2 thin films, IEEE Electron Device Letters 40, 570 (2019)..
- [46] (2019d) Jun-Hui Yuan#, Biao Zhang#, Ya-Qian Song, Jia-Fu Wang, Kan-Hao Xue* and Xiang-Shui Miao, Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility, Journal of Materials Science 54, 7035 (2019)..
- [47] (2019c) Jun-Hui Yuan, Alessandro Cresti, Kan-Hao Xue*, Ya-Qian Song, Hai-Lei Su, Li-Heng Li, Nai-Hua Miao*, Zhi-Mei Sun, Jia-Fu Wang and Xiang-Shui Miao, TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility, Journal of Materials Chemistry C 7, 639 (2019)..
- [48] (2019b) Ya-Qian Song#, Jun-Hui Yuan#, Li-Heng Li, Ming Xu, Jia-Fu Wang, Kan-Hao Xue* and Xiang-Shui Miao, KTlO: a metal shrouded 2D semiconductor with high carrier mobility and tunable magnetism, Nanoscale 11, 1131 (2019)..
- [49] (2019a) Jun-Hui Yuan, Ya-Qian Song, Qi Chen, Kan-Hao Xue* and Xiang-Shui Miao, Single-layer planar penta-X2N4 (X = Ni, Pd and Pt) as direct-bandgap semiconductors from first principle calculations, Applied Surface Science 469, 456 (2019)..
- [50] (2018n) B. Wang, K. H. Xue, H. J. Sun*, Z. N. Li, W. Wu, P. Yan, N. Liu, B. Y. Tian, X. X. Liu and X. S. Miao, Performance enhancement of TaOx resistive switching memory using graded oxygen content, Applied Physics Letters 113, 183501 (2018)..