Indexed by: Journal paper

First Author: 徐刚

Correspondence Author: 方忠

Co-author: Gang Xu, Haijun Zhang, Xi Dai, Zhong Fang

Journal: Europhysics Letters

Included Journals: SCI

Discipline: Science

First-Level Discipline: Physics

Document Type: J

Volume: 84

Issue: 6

Page Number: 67015

Date of Publication: 2009-01-26

Abstract: We show, from first-principles calculations, that the hole-doped side of Fe-As–based compounds is different from its electron-doped counterparts. The electron side is characterized as an itinerant metal with Fermi surface nesting, and SDW-to-NM quantum critical point (QCP) is realized by doping. For the hole-doped side, on the other hand, orbital-selective magnetic ordering develops together with checkboard anti-ferromagnetic (AF) ordering without lattice distortion.