Indexed by:Journal paper First Author:徐刚 Co-author:Gang Xu, Jing Wang, Claudia Felser, Xiao-Liang Qi, Shou-Cheng Zhang Journal:Nano letters Included Journals:SCI Discipline:Science First-Level Discipline:Physics Document Type:J Volume:15 Issue:3 Page Number:2019-2023 Date of Publication:2015-02-03 Abstract:On the basis of ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a nontrivial band gap up to 38 meV. The principle behind our prediction is that the band inversion between two topologically trivial ferromagnetic insulators can result in a nonzero Chern number, which offers a better way to realize the quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system.