Indexed by: Journal paper

First Author: 徐刚

Co-author: Gang Xu, Jing Wang, Claudia Felser, Xiao-Liang Qi, Shou-Cheng Zhang

Journal: Nano letters

Included Journals: SCI

Discipline: Science

First-Level Discipline: Physics

Document Type: J

Volume: 15

Issue: 3

Page Number: 2019-2023

Date of Publication: 2015-02-03

Abstract: On the basis of ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a nontrivial band gap up to 38 meV. The principle behind our prediction is that the band inversion between two topologically trivial ferromagnetic insulators can result in a nonzero Chern number, which offers a better way to realize the quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system.