Indexed by: Journal paper

First Author: Yong Xu,Yong Xu

Correspondence Author: Shou-Cheng Zhang,Shou-Cheng Zhang

Co-author: Binghai Yan, Hai-Jun Zhang, Jing Wang, Gang Xu, Peizhe Tang, Wenhui Duan

Journal: Physical review letters

Included Journals: SCI

Discipline: 物理学

Document Type: J

Volume: 111

Issue: 13

Page Number: 136804

Date of Publication: 2013-09-24

Abstract: The search for large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the Γ point, similar to the case of a HgTe quantum well.