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Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction
Release time:2019-02-22  Hits:

Indexed by: Journal paper

First Author: 袁洪涛

Co-author: Hongtao Yuan, Xiaoge Liu, Farzaneh Afshinmanesh, Wei Li, Gang Xu, Jie Sun, Biao Lian, Alberto G Curto, Guojun Ye, Yasuyuki Hikita, Zhixun Shen, Shou-Cheng Zhang, Xianhui Chen, Mark Brongersma, Harold Y Hwang, Yi Cui

Journal: Nature nanotechnology

Included Journals: SCI

Discipline: Science

First-Level Discipline: Physics

Document Type: J

Volume: 10

Issue: 8

Page Number: 707

Date of Publication: 2015-08-22

Abstract: The ability to detect light over a broad spectral range is central to practical optoelectronic applications and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS 2. However, polarization sensitivity within such a photodetector remains elusive.Here, we demonstrate a broadband photodetector using a layered black phosphorus transistor that is polarization-sensitive over a bandwidth from∼ 400 nm to 3,750 nm. .