Indexed by: Journal paper

First Author: 袁洪涛

Co-author: Hongtao Yuan, Xinqiang Wang, Biao Lian, Haijun Zhang, Xianfa Fang, Bo Shen, Gang Xu, Yong Xu, Shou-Cheng Zhang, Harold Y Hwang, Yi Cui

Journal: Nature nanotechnology

Included Journals: SCI

Discipline: Science

First-Level Discipline: Physics

Document Type: J

Volume: 9

Issue: 10

Page Number: 851

Date of Publication: 2014-10-27

Abstract: The valley degree of freedom in layered transition-metal dichalcogenides provides an opportunity to extend the functionalities of spintronics and valleytronics devices. The achievement of spin-coupled valley polarization induced by the non-equilibrium charge-carrier imbalance between two degenerate and inequivalent valleys has been demonstrated theoretically and by optical experiments. However, the generation of a valley and spin current with the valley polarization in transition-metal dichalcogenides remains elusive.