Indexed by: Journal paper

First Author: Shijiang Luo

Correspondence Author: Long You

Co-author: Jeongmin Hong,Yaoyuan Wang,Nuo Xu

Journal: IEEE Electron Device Lett.

Included Journals: SCI

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Volume: 41

Issue: 6

Page Number: 932 - 935

Key Words: Skyrmion, Thermally assisted memory

DOI number: 10.1109/LED.2020.2986312

Impact Factor: 4.187

Abstract: A novel thermally assisted skyrmion memory (TA-SKM) has been proposed and studied for the first time. Unidirectional current-induced spin transfer torque (STT) and Joule heating effect are used to induce the magnetization switching between uniform and skyrmion states in the free layer of a magnetic tunnel junction device. Physics-based simulations suggest that TA-SKM offers advantages including unipolar switching feature for cross-point memory integration, better TMR design as compared to STT-MRAM, and improved operation temperature range as compared to TA-MRAM.

Number of Words: 2500

Links to published journals: https://ieeexplore.ieee.org/document/9058657