论文类型：期刊论文
第一作者：Shijiang Luo
通讯作者：Long You
合写作者：Jeongmin Hong,Yaoyuan Wang,Nuo Xu
发表刊物：IEEE Electron Device Lett.
收录刊物：SCI
学科门类：工学
一级学科：电子科学与技术
卷号：41
期号：6
页面范围：932 - 935
关键字：Skyrmion, Thermally assisted memory
DOI码：10.1109/LED.2020.2986312
影响因子：4.187
摘要：A novel thermally assisted skyrmion memory (TA-SKM) has been proposed and studied for the first time. Unidirectional current-induced spin transfer torque (STT) and Joule heating effect are used to induce the magnetization switching between uniform and skyrmion states in the free layer of a magnetic tunnel junction device. Physics-based simulations suggest that TA-SKM offers advantages including unipolar switching feature for cross-point memory integration, better TMR design as compared to STT-MRAM, and improved operation temperature range as compared to TA-MRAM.
字数：2500
发布期刊链接：https://ieeexplore.ieee.org/document/9058657