曾祥斌

·Paper Publications

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High-performance p-type MoS2 field-effect transistor by toroidal-magnetic-field controlled oxygen plasma doping
Release time:2021-07-01  Hits:

Journal: 2D Materials

Included Journals: SCI、EI

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

DOI number: 10.1088/2053-1583/aafe2d

Impact Factor: 8.0