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HUAZHONG UNIVERSITY OF SCIENCE & TECHNOLOGY

曾祥斌

Recommended Ph.D.Supervisor Recommended MA Supervisor
2025-5-10，Saturday

·Patents

Current position: 英文主页 > Scientific Research > Patents
基于柔性衬底底栅结构MoS2 TFT器件及制备方法
Release time:2021-07-08  Hits:

Type of Patent: Invent

Authorization number: ZL201711358320.4

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