华中科技大学主页平台管理系统 ZHANG WEN HAO--英文主页-- Interface Ferroelectric Transition near the Gap-Opening Temperature in a Single-Unit-Cell FeSe Film Grown on Nb-Doped SrTiO3 Substrate

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Interface Ferroelectric Transition near the Gap-Opening Temperature in a Single-Unit-Cell FeSe Film Grown on Nb-Doped SrTiO3 Substrate

Release time:2021-03-05 Hits:

First Author: Cui,Y.-T.

Journal: Phys. Rev. Lett. 114, 037002 (2015).

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Common electronic features and electronic nematicity in parent compounds of iron-based superconductors and FeSe/SrTiO3 films revealed by angle-resolved photoemission spectroscopy
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Interface-Induced High-Temperature Superconductivity in Single Unit-Cell FeSe Films on SrTiO3