·Patents
采用水基原子层沉积技术在石墨烯表面制备高k栅介质的方法
Release time:2019-03-07 Hits:
Patent Applicant: 张有为; 仇志军; 陈国平; 陆冰睿; 刘冉
Type of Patent: Invent
Application Number: 201210365230.9
Authorization number: ZL201210365230.9
Application Date: 2012-09-26
Authorization Date: 2015-12-09
First Author: 张有为