Patents
采用水基原子层沉积技术在石墨烯表面制备高k栅介质的方法
Release time:2019-03-07 Hits:
Patent Applicant:张有为; 仇志军; 陈国平; 陆冰睿; 刘冉
Type of Patent:Invent
Application Number:201210365230.9
Authorization number:ZL201210365230.9
Application Date:2012-09-26
Authorization Date:2015-12-09
First Author:张有为
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