·Paper Publications
A novel MOCVD reactor for growth of high-quality GaN-related LED layers
Release time:2019-05-30 Hits:
Indexed by: Journal paper
First Author: Shaolin Hu
Correspondence Author: Zhiyin Gan; Haisheng Fang
Journal: Journal of Crystal Growth
Included Journals: SCI
Volume: 415
Issue: 1
Page Number: 72-77
A novel MOCVD reactor for growth of high-quality GaN-related LED layers.pdf