2025-6-5，Thursday
·Paper Publications
- [1] Zhiyin Gan,victor liu.Application of Car-Parrinello Molecular Dynamics to Ga-rich GaN Buffer Layer for Stress Relaxation in GaN Grown Layer.International Journal of Nonlinear Sciences & Numerical Simulation,(5):557-562
- [2] Tingkai Zhang,Zhiyin Gan.Study on triple-stack anodic bonding using two electrodes.Sensors and Actuators A: Physical,(1):168-172
- [3] Zhiyin Gan,Sheng Liu.Getter free vacuum packaging for MEMS.Sensors and Actuators A: Physical,(1):159-164
- [4] Song X. H,Zhiyin Gan.First-principles study on effects of mechanical deformation on outer surface reactivity of carbon nanotubes.Physica E,(4):626-630
- [5] Rongjun Zhang,Zhiyin Gan.Crystal quality improvement of Gallium Nitride on plane Sapphire by predose method.IEEE,245-246
- [6] Shaolin Hu,Zhiyin Gan; Haisheng Fang.A novel MOCVD reactor for growth of high-quality GaN-related LED layers.Journal of Crystal Growth,(1):72-77
- [7] Zhimin Jiang,Zhiyin Gan;Haisheng Fang.Uniformity investigation of MOCVD‐grown LED layers.Crystal Research and Technology,(1):30-40
- [8] Jiang Zheng,Zhiyin Gan;Haisheng Fang.Uniformity analysis of temperature distribution in an industrial MOCVD reactor.[J].Crystal Research and Technology,(10):617-626
- [9] Zhi Zhang,Zhiyin Gan;Haisheng Fang.Influence of Species Transport and Inlet Condition on the MOCVD-Grown GaN Uniformity[C].[C].Proceedings of the ASME 2016 International Mechanical Engineering Congress and Exposition,V008T10A050
- [10] Zhi Zhang,Zhiyin Gan;Haisheng Fang.Species transport and chemical reaction in a MOCVD reactor and their influence on the GaN growth uniformity.[J].Journal of Crystal Growth,(15):87-95