高国营

个人信息Personal Information

副教授   博士生导师   硕士生导师  

性别:男

在职信息:在职

所在单位:物理学院

学历:研究生(博士)毕业

学位:博士学位

毕业院校:华中科技大学

学科:凝聚态物理

其他联系方式Other Contact Information

邮编 :

通讯/办公地址 :

邮箱 :

个人简介Personal Profile

高国营,副教授,博士生导师,中共党员博士毕业于华中科技大学凝聚态物理专业。主要从事自旋电子学与热电子学的研究,以第一/通讯作者在PRBAPL、2D Mater.和Nanoscale等刊物发表论文80多篇(包括ESI高被引编辑推荐和期刊亮点热点封面),被包括Science, PRL和Nat. Rev. Mater.等论文引用3600多次,单篇被引用10次以上的论文10篇担任Scientific Reports编委,Front. Phys.客座编辑,Nano Lett.、Adv. Mater./Sci.和APL等多个期刊的审稿人曾获校研究生科技十佳、省优秀博士学位论文、校华中学者、爱思唯尔中国高被引学者以及CPB、物理学报优秀评阅人等称号。先后到日、美、德、意俄等国开展学术交流。主持3项国家自然科学基金、1项教育部博士点基金和2项省自然科学基金。指导博士毕业生7名,硕士毕业生8名。

个人主页:http://faculty.hust.edu.cn/gaoguoying/zh_CN/index.htm

办公室:逸夫科技楼南412;邮箱:guoying_gao@mail.hust.edu.cn

研究方向:

1) 低维磁性的调控:利用应变、载流子掺杂、电场、Janus结构和异质结构等手段,调控磁各向异性、磁转变温度、高自旋极化率(磁性半金属、自旋无能隙半导体、双极磁性半导体)、谷极化和Rashba自旋劈裂等。

2) 低维自旋输运:磁隧道结和铁电隧道结的输运性质,包括隧穿磁电阻、隧穿电致电阻、自旋过滤效应、自旋二极管效应和自旋塞贝克效应等。

3) 热电输运: 能带工程、低维结构和化学键等对电子和声子热输运的调控

讲授课程

大学物理(一、)物理实验(一、)凝聚态物理前沿

代表作:

1) Z. Xu, Q. Xia, L. Zhang, and G. Gao, “van der Waals p-n heterostructure GaSe/SnS2: high thermoelectric figure of merit and strong anisotropy”, Nanoscale (2024https://doi.org/10.1039/D3NR05284B).

2) L. Zhang, Y. Zhao, Y. Liu, and G. Gao, “High spin polarization, large perpendicular magnetic anisotropy and room-temperature ferromagnetism by biaxial strain and carrier doping in Janus MnSeTe and MnSTe”, Nanoscale 15, 18910 (2023).

3) L. Zhang, Y. Liu, Z. Xu, and G. Gao, “Electronic phase transition, perpendicular magnetic anisotropy and high Curie temperature in Janus FeClF”, 2D Mater. 10, 045005 (2023).

4) Y. Liu, L. Zhang, X. Wu, and G. Gao, “Enhanced ferromagnetism, magnetic anisotropy, and spin polarization in Janus CrSeTe via strain and doping”, Appl. Phys. Lett. 123, 192407 (2023).

5) L. Hu, J. Han, and G. Gao, “Layer- and barrier-dependent spin filtering effect and high tunnel magnetoresistance in FeCl2 based van der Waals junctions”, Appl. Phys. Lett. 123, 052401 (2023).

6) L. Hu, X. Wu, Y. Feng, Y. Liu, Z. Xu, and G. Gao, “Spin filtering effect, thermal spin diode effect and high tunneling magnetoresistance in the Au/GdI2/Au van der Waals junction”, Nanoscale 14, 7891 (2022).

7) Y. Feng, Z. Wang, X. Zuo, and G. Gao, Electronic phase transition, spin filtering effect and spin Seebeck effect in 2D high-spin-polarized VSi2X(X=N, P, As), Appl. Phys. Lett. 120, 092405 (2022). (Editor’s Pick)

8) Y. Feng, N. Liu and G. Gao*, “Spin transport properties in Dirac spin gapless semiconductors Cr2X3 with high Curie temperature and large magnetic anisotropic energy”, Appl. Phys. Lett. 118, 112407 (2021).

9) Y. Feng, X. Wu and G. Gao, “High tunnel magnetoresistance based on 2D Dirac spin gapless semiconductor VCl3”, Appl. Phys. Lett. 116, 022402 (2020).

10) Y. Feng, X. Wu, L. Hu and G. Gao, “FeCl2/MoS2/FeCl2 van der Waals junction for spintronic applications”, J. Mater. Chem. C 8, 14353 (2020). (Communition)

11) X. Wu, L. Xiong, Y. Feng, C. Wang, and G. GaoThe half-metallicity and the spin filtering, NDR and spin Seebeck effects in 2D Ag-doped SnSe2 monolayer”, J. Chem. Phys. 150, 064701 (2019).

12) Y. Feng, X. Wu, J. Han, and G. Gao, “Robust half-metallicities and perfect spin transport properties in 2D transition metal dichlorides”, J. Mater. Chem. C 6, 4087 (2018).

13) C. Wang, G. Ding, X. Wu, S. Wei and G. Gao, “Electron and phonon transport properties of layered Bi2O2Se and Bi2O2Te from first-principles calculations”, New J. Phys. 20, 123014 (2018).

14) J. Han and G. Gao, “Large tunnel magnetoresistance and temperature-driven spin filtering effect based on the compensated ferrimagnetic spin gapless semiconductor Ti2MnAl”, Appl. Phys. Lett. 113, 102402 (2018).

15) J. Han, Y. Feng, K. Yao and G.Y. Gao, “Spin transport properties based on spin gapless semiconductor CoFeMnSi”, Appl. Phys. Lett. 111, 132402 (2017).

16) G. Ding, J. Chen, K. Yao and G. Gao, “Enhanced thermoelectric properties of layered ZrS2 by orbital engineering”, New J. Phys. 19, 073036 ( 2017).

17) G. Ding, J. Carrete, W. Li, G.Y. Gao and K. Yao, “Ultralow lattice thermal conductivity in topological insulator TlBiSe2”, Appl. Phys. Lett. 108, 233902 (2016).

18) G. Gao, G. Ding, J. Li, M. Wu, K. Yao and M. Qian, “Monolayer MXenes: Promising half-metals and spin gapless semiconductors”, Nanoscale 8, 8986 (2016). (ESI, cited 349)

19) G.Y. Gao and K. L. Yao, “Surface half-metallicity of CrS thin films and perfect spin filtering and spin diode effects of CrS/ZnSe heterostructure”, Appl. Phys. Lett. 105, 182405 (2014).

20) G.Y. Gao and K.-L. Yao, “Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D03-type Heusler alloys”, Appl. Phys. Lett. 103, 232409 (2013) (cited 151)

21) G. Y. Gao, L. Hu, K. L. Yao, B. Luo, and N. Liu, “Large half-metallic gaps in the quaternary Heusler alloys CoFeCrZ (Z=Al, Ga, Si, Ge): A first-principles study”, J. Alloys Compd. 551, 539 (2013). (ESI, cited 238)

22) G.Y. Gao and K. L. Yao“Half-metallic sp-electron ferromagnets in rock-salt structure: The case of SrC and BaC”Appl. Phys. Lett. 91, 082512 (2007). (cited 100)

23) G.Y. Gao, K. L. Yao, E. Sasioglu, L. M. Sandratskii, Z. L. Liu and J. L. Jiang, “Half-metallic ferromagnetism in zinc-blende CaC, SrC, and BaC from first-principles”, Phys. Rev. B 75, 174442 (2007). (cited 298)

24) 张龙高国营*, “范德瓦尔斯气体的状态方程与多方过程”, 物理与工程 (2023年第6).


  • 教育经历Education Background
  • 工作经历Work Experience
    暂无内容
    暂无内容
  • 研究方向Research Focus
  • 社会兼职Social Affiliations
    暂无内容
    暂无内容