·Paper Publications
(17) Xiong Xiong, Mingqiang Huang, Ben Hu, Xuefei Li, Fei Liu, Sichao Li, Mengchuan Tian, Tiaoyang Li, Jian Song, and Yanqing Wu. A transverse tunnelling field-effect transistor made from a van der Waals heterostructure. Nature Electronics 2020, 3, 106-112.
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(16) Xiong Xiong, Anyu Tong, Xin Wang, Shiyuan Liu, Xuefei Li, Ru Huang, and Yanqing Wu. Demonstration of vertically-stacked CVD Monolayer Channels: MoS2 nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET, 11-16 Dec. 2021, 2021 IEEE International Electron Devices Meeting (IEDM).
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(18) Shengman Li, Chengru Gu, Xuefei Li, Ru Huang, Yanqing Wu. 10-nm channel length indium-tin-oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL compatibility, 12-18 Dec. 2020, 2020 IEEE International Electron Devices Meeting (IEDM).