·Paper Publications
(18) Shengman Li, Chengru Gu, Xuefei Li, Ru Huang, Yanqing Wu. 10-nm channel length indium-tin-oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL compatibility, 12-18 Dec. 2020, 2020 IEEE International Electron Devices Meeting (IEDM).
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(17) Xiong Xiong, Mingqiang Huang, Ben Hu, Xuefei Li, Fei Liu, Sichao Li, Mengchuan Tian, Tiaoyang Li, Jian Song, and Yanqing Wu. A transverse tunnelling field-effect transistor made from a van der Waals heterostructure. Nature Electronics 2020, 3, 106-112.
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(19) Mengfei Wang, Mengchuan Tian, Zhenfeng Zhang, Shengman Li, Runsheng Wang, Chengru Gu, Xiaoyu Shan, Xiong Xiong, Xuefei Li, Ru Huang and Yanqing Wu. High performance gigahertz flexible radio frequency transistors with extreme bending conditions, 7-11 Dec. 2019, 2019 IEEE International Electron Devices Meeting (IEDM).