Indexed by: Journal paper

First Author: Zhong,Yingpeng,李祎

Correspondence Author: 缪向水

Co-author: 缪向水,程晓敏,TONG HAO,Huajun SUN,Wang,Qing,Xu,Lei,Zhang,Jinjian

Journal: SCIENTIFIC REPORTS

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

DOI number: 10.1038/srep04906

Date of Publication: 4173-12-01

Abstract: Nanoscale inorganic electronic synapses or synaptic devices, which are capable ofemulating the functions of biological synapses of brain neuronal systems, are regarded as the basic building blocks for beyond-Von Neumann computing architecture, combining information storage and processing. Here, we demonstrate a Ag/AgInSbTe/Ag structure for chalcogenide memristor-based electronic synapses. The memristive characteristics with reproducible gradual resistance tuning are utilised to mimic the activity-dependent synaptic plasticity that serves as the basis of memory and learning. Bidirectional long-term Hebbian plasticity modulation is implemented by the coactivity of pre- and postsynaptic spikes, and the sign and degree are affected by assorted factors including the temporal difference, spike rate and voltage. Moreover, synaptic saturation is observed to be an adjustment of Hebbian rules to stabilise the growth of synaptic weights. Our results may contribute to the development ofhighly functional plastic electronic synapses and the further construction of next-generation parallel neuromorphic computing architecture.

Links to published journals: https://www.nature.com/articles/srep04906