·Paper Publications
Resistive Switching Characteristics of HfOx-Based Memristor by Inserting GeTe Layer
Release time:2024-04-18 Hits:
Indexed by: Journal paper
Correspondence Author: Hua-Nan Liang, Na Bai, Lan-Qing Zou, Hua-Jun Sun*, Kan-Hao Xue, Wei-Ming Cheng, Hong Lu, Xiangshui Miao
Journal: IEEE Transactions on Electron Devices
Included Journals: SCI
Volume: 3225123
Page Number: 1-5
Date of Publication: 2022-10-18