·Paper Publications
Conducting mechanism of Ag-diffused Bi-Te based resistive switching devices, Liu N, Yan P, Li Y, Lu K, Sun HJ*, Ji HK, Xue KH, Miao XS, Applied Physics A-Materials Science & Processing, 124, 2, 143(2018)
Release time:2021-05-31  Hits:
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Performance enhancement of TaOx resistive switching memory using graded oxygen content,B. Wang, K. H. Xue, H. J. Sun*, Z. N. Li, W. Wu, P. Yan, N. Liu, B. Y. Tian, X. X. Liu, and X. S. Miao,Appl. Phys. Lett. 113, 183501 (2018)
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Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions, He WF, Sun HJ*, Zhou YX, Lu K, Xue KH, Miao XS, SCIENTIFIC REPORTS, Volume 7, 10070 (2017)