·Paper Publications
Performance enhancement of TaOx resistive switching memory using graded oxygen content，B. Wang, K. H. Xue, H. J. Sun*, Z. N. Li, W. Wu, P. Yan, N. Liu, B. Y. Tian, X. X. Liu, and X. S. Miao，Appl. Phys. Lett. 113, 183501 (2018)
Release time:2021-05-31 Hits:
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Diverse spike-timing dependent plasticity based on multilevel HfOx memristor for neuromorphic computing, Ke Lu, Yi Li*, Wei-fan He, Jia Chen, Ya-Xiong Zhou, Nian Duan, Miao-Miao Jin, Wei Gu, Kan-Hao Xue, Hua-Jun Sun, and Xiang-Shui Miao, Applied Physics A. Materials Science & Processing, 124:438 (2018)
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Conducting mechanism of Ag-diffused Bi-Te based resistive switching devices, Liu N, Yan P, Li Y, Lu K, Sun HJ*, Ji HK, Xue KH, Miao XS, Applied Physics A-Materials Science & Processing, 124, 2, 143(2018)