·Paper Publications
Coexistence of digital and analog resistive switching with low operation voltage in oxygen-gradient HfOx memristors, Zhaonan Li, Baoyi Tian, Kan-Hao Xue, Biao Wang, Ming Xu, Hong Lu, Huajun Sun*, and Xiangshui Miao, IEEE Electron Device Letters 40, 1068 (2019)
Release time:2021-05-31 Hits:
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Jianwei Guo,Shen Guo,Xiaoming Su,Sheng Zhu,Yue Pang,Wei Luo,Jianbing Zhang,Huajun Sun,Honglang Li,Daoli Zhang,Nonvolatile Resistive Switching Memory Device Employing CdSe/CdS Core/Shell Quantum Dots as an Electrode Modification Layer,ACS Applied Electronic Materials,2020.
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Next One:：
Oxygen migration around the filament region in HfOx memristors, Ge-Qi Mao, Kan-Hao Xue*, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, and Xiang-Shui Miao, AIP Advances 9, 105007 (2019)