·Paper Publications
Jianwei Guo,Shen Guo,Xiaoming Su,Sheng Zhu,Yue Pang,Wei Luo,Jianbing Zhang,Huajun Sun,Honglang Li,Daoli Zhang,Nonvolatile Resistive Switching Memory Device Employing CdSe/CdS Core/Shell Quantum Dots as an Electrode Modification Layer,ACS Applied Electronic Materials,2020.
Release time:2021-05-31 Hits:
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Na Bai,Baoyi Tian,GeQi Mao,KanHao Xue*,Tao Wang,JunHui Yuan,Xiaoxin Liu,Zhaonan Li,Shen Guo,Zuopai Zhou,Nian Liu,Hong Lu,Xiaodong Tang, Huajun Sun*,and Xiangshui Miao,Homo-layer hafnia-based memristor with large analog switching window,Appl.Phys.Lett.118,043502 (2021).
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Coexistence of digital and analog resistive switching with low operation voltage in oxygen-gradient HfOx memristors, Zhaonan Li, Baoyi Tian, Kan-Hao Xue, Biao Wang, Ming Xu, Hong Lu, Huajun Sun*, and Xiangshui Miao, IEEE Electron Device Letters 40, 1068 (2019)